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IRLZ44NPBF

Part Number	IRLZ44NPBF
Manufacturer	International Rectifier
Description	POWER MOSFET
Published	Mar 7, 2016
Detailed Description	l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc...
Datasheet	IRLZ44NPBF PDF File

Overview

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 0.
022Ω S ID = 47A TO-220AB Max.
47 33 160 110 0.
71 ±16 210 25 11 5.
0 -55 to + 175 300 (1.
6mm from case) 10 lbfin (1.
1Nm) Min.
Typ.
0.
50 Max.
1.
4 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 11/11/03 IRLZ44NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs ...

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IRLZ44NPBF POWER MOSFET - International Rectifier

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