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2SK3556-01SJ

Fuji Electric
Part Number 2SK3556-01SJ
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Aug 28, 2007
Detailed Description www.DataSheet4U.com 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Ser...
Datasheet PDF File 2SK3556-01SJ PDF File

2SK3556-01SJ
2SK3556-01SJ

Overview
www.
DataSheet4U.
com 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 250 220 ±25 ±100 ±30 25 372 20 5 2.
02 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) < < DSS, Tch=150°C < *1 L=0.
67mH, Vcc=48V *2 Tch=150°C *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV *4 VDS< 250V *5 V GS =-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VDS=200V VGS=±30V ID=12.
5A ID=12.
5A VDS =75V VGS=0V f=1MHz VGS=0V VGS=0V VDS=0V VGS=10V VDS=25V 8 Tch=25°C Tch=125°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 25 1.
10 0.
45 1.
5 1.
65 Min.
250 3.
0 Typ.
Max.
5.
0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 ...


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