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GI70L02

GTM
Part Number GI70L02
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B GI70L02 Description N-C...
Datasheet PDF File GI70L02 PDF File

GI70L02
GI70L02


Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B GI70L02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 66A The GI70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 66 42 210 66 0.
53 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-case Rthj-amb Value 1.
9 110 Unit /W /W GI70L02 Page: 1/5 ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
037 28 23 3 17 8.
8 95 24 14 790 475 195 Max.
3.
0 ±100 1 25 9 18 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=33A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=33A VGS=4.
5V, ID=20A ID=33A VDS=20V VGS=5V VDS=15V ID=33A VGS=10V RG=3.
3 RD=0.
45 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Cur...


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