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GI70T03

GTM
Part Number GI70T03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B GI70T 03 Description N-...
Datasheet PDF File GI70T03 PDF File

GI70T03
GI70T03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B GI70T 03 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 10m 60A The GI70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *Low Gate Charge *Fast Switching Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 60 43 195 53 0.
36 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 2.
8 110 Unit /W /W GI70T03 Page: 1/4 ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
032 35 16.
5 5 10.
3 8.
2 105 21.
4 8.
5 1485 245 170 Max.
3.
0 ±100 1 250 10 18 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=33A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=33A VGS=4.
5V, ID=20A ID=33A VDS=20V VGS=4.
5V VDS=15V ID=33A VGS=10V RG=3.
3 RD=0.
45 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Le...


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