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GJ20N03

GTM
Part Number GJ20N03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GJ20N03 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GJ20N03 PDF File

GJ20N03
GJ20N03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GJ20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 52m 20A The GJ20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Dynamic dv/dt Rating *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Description Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain C...


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