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GJ20P02

Part Number	GJ20P02
Manufacturer	GTM
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ20P02 P-CHANNEL ENHANCEMENT MODE ...
Datasheet	GJ20P02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ20P02 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 52m -18A Description The GJ20P02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *2.
5V Gate Drive Capability *Fast Switching Characteristic Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Curren...

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GJ20P02 P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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