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GJ494

GTM
Part Number GJ494
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : GJ494 N-CHANNEL ENHANCEMENT MODE PO...
Datasheet PDF File GJ494 PDF File

GJ494
GJ494

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : GJ494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a high side switch in SMPS and general purpose applications.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 I...


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