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GJ80LS02

Part Number	GJ80LS02
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 5, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE...
Datasheet	GJ80LS02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A Description The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features *Low On-resistance *Simple Drive Requirement *Fast Switching Speed Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K ...

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GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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