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GJ85T03

GTM
Part Number GJ85T03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 5, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GJ85T 03 N-CHANNEL ENHANCEMENT MODE...
Datasheet PDF File GJ85T03 PDF File

GJ85T03
GJ85T03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GJ85T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A Description The GJ85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
5V Continuous Drain Current, VGS@4.
5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 75 55 350 107 0.
7 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 1.
4 110 Unit /W /W GJ85T03 Page: 1/4 ISSUED DATE :2005/11/24 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
30 1.
0 Typ.
0.
018 32 33 7.
5 24 11.
2 77 35 67 2700 550 380 Max.
3.
0 ±100 1 500 6 10 52 4200 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=30A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=45A VGS=4.
5V, ID=30A ID=30A VDS=24V VGS=4.
5V VDS=15V ID=30A VGS=10V RG=3.
3 RD=0.
5 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold...


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