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GJ9916

GTM
Part Number GJ9916
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 5, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B GJ9916 N-CHANNEL ENHANCE...
Datasheet PDF File GJ9916 PDF File

GJ9916
GJ9916

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B GJ9916 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A The GJ9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Single Drive Requirement *Low on-resistance *Capable of 2.
5V gate drive *Low drive current Description Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
5V Continuous Drain Current, VGS@4.
5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg Ratings 18 ±12 35 16 90 50 0.
4 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 2.
5 110 Unit /W /W GJ9916 Page: 1/5 ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
18 0.
5 Typ.
0.
03 18 17.
5 1.
2 7.
9 7.
3 98 25.
6 98 527 258 112 Max.
1.
0 ±100 25 250 25 40 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= ±12V VDS=18V, VGS=0 VDS=18V, VGS=0 VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A ID=18A VDS=18V VGS=5V VDS=10V ID=18A VGS=5V RG=3.
3 RD=0.
56 VGS=0V VDS=18V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=125 ) V...


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