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GJSD1804

GTM
Part Number GJSD1804
Manufacturer GTM
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Published Sep 6, 2007
Detailed Description www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1804 Description Features NP N EP ITAXI AL P...
Datasheet PDF File GJSD1804 PDF File

GJSD1804
GJSD1804

Overview
www.
DataSheet4U.
com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1804 Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
*Low collector-to-emitter saturation voltage *High current and high fT *Excellent linearity of hFE *Fast switching time Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 Tj Tstg VCBO VCEO VEBO IC IC PD Tc=25 , unless otherwise specified) Symbol Ratings +150 -55 ~ +150 60 50 6 8 12 ...


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