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MT47H128M4

Micron Technology
Part Number MT47H128M4
Manufacturer Micron Technology
Description DDR2 SDRAM
Published Sep 7, 2007
Detailed Description 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT...
Datasheet PDF File MT47H128M4 PDF File

MT47H128M4
MT47H128M4

Overview
512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Features • VDD = 1.
8V ±0.
1V, VDDQ = 1.
8V ±0.
1V • JEDEC-standard 1.
8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 4 internal banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Selectable burst lengths: 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Industrial temperature (IT) option • RoHS-compliant • Supports JEDEC clock jitter specification Options1 • Configuration – 128 Meg x 4 (32 Meg x 4 x 4 banks) – 64 Meg x 8 (16 Meg x 8 x 4 banks) – 32 Meg x 16 (8 Meg x 16 x 4 banks) • FBGA package (Pb...


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