DatasheetsPDF.com

BCR08AS-12

Renesas Technology
Part Number BCR08AS-12
Manufacturer Renesas Technology
Description TRIAC
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • IT (RMS) : 0...
Datasheet PDF File BCR08AS-12 PDF File

BCR08AS-12
BCR08AS-12

Overview
www.
DataSheet4U.
com BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.
2.
00 Mar 22, 2007 Features • • • • IT (RMS) : 0.
8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA • Non-Insulated Type • Planar Passivation Type • Completed Pb Free Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 3 RENESAS Package code: PLZZ0004CB-A LZ ZZ0004 (Package name: SOT-89) ) 2, 4 4 1 2 3 1 1.
2.
3.
4.
T1 Terminal T2 Terminal Gate Terminal T2 Terminal 4 3 Applications Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1.
Gate open.
Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Symbol VDRM VDSM Ratings 0.
8 8 0.
26 1 0.
1 10 1 – 40 to +125 – 40 to +125 50 Unit A A A2s W W V A °C °C mg Typical value Voltage class 12 (Mark BF) 600 720 Conditions Commercial frequency, sine full wave Note3 360° conduction, Ta = 40°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Unit V V REJ03G0292-0200 Rev.
2.
00 Mar 22, 2007 Page 1 of 7 BCR08AS-12 Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ ΙV Ι ΙΙ ΙΙΙ ΙV Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ VFGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ IFGTΙΙΙ VGD Rth (j-a) (dv/dt)c Min.
— — — — — — — — — — 0.
1 — 0.
5 Typ.
— — — — — — — — — — — — — Max.
2.
0 2.
0 2.
0 2.
0 2.
0 2.
0 5 5 5 10 — 65 — Unit mA V V V V V mA mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.
2 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Tj = 25°C, VD = 6 V, RL = 6 Ω...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)