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GSC4413

GTM
Part Number GSC4413
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/24 REVISED DATE : GSC4413 P-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GSC4413 PDF File

GSC4413
GSC4413

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/02/24 REVISED DATE : GSC4413 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 30m -7.
8A The GSC4413 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristics Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0° 0.
40 0.
19 6.
20 5.
00 4.
00 8° 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45° 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -20 ±20 -7.
8 -6.
2 -30 2.
5 0.
02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 50 Unit /W GSC4413 Page: 1/4 ISSUED DATE :2006/02/24 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
-20 -0.
5 Typ.
-0.
01 16 17 4 7 12 11 40 13 1140 250 210 4.
3 Max.
-1.
5 ±100 -1 -25 30 40 65 27 1820 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VGS=±20V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-10V, ID=-7A VGS=-4.
5V, ID=-4A VGS=-2.
5V, ID=-2A ID=-7A VDS=-16V VGS=-4.
5V VDS=-10V ID=-2A VGS=-10V RG=3.
3 RD=10 VGS=0V VDS=-25V f=1.
0MHz f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Lea...


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