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GT50J327

Toshiba Semiconductor
Part Number GT50J327
Manufacturer Toshiba Semiconductor
Description silicon N-channel IGBT
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonan...
Datasheet PDF File GT50J327 PDF File

GT50J327
GT50J327

Overview
www.
DataSheet4U.
com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.
19 µs (typ.
) (IC = 50A) Low saturation voltage: VCE (sat) = 1.
9 V (typ.
) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°...


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