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HAF2012S

Renesas Technology
Part Number HAF2012S
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET Series Power Switching
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Ju...
Datasheet PDF File HAF2012S PDF File

HAF2012S
HAF2012S

Overview
www.
DataSheet4U.
com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.
4.
00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENE...


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