DatasheetsPDF.com

SPP100N03S2-03

Part Number	SPP100N03S2-03
Manufacturer	Infineon Technologies
Description	OptiMOS Power-Transistor
Published	Sep 11, 2007
Detailed Description	www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Produc...
Datasheet	SPP100N03S2-03 PDF File

Overview

www.
DataSheet4U.
com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 30 3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116 Marking PN0303 PN0303 PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
3 max.
0.
5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 30 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.
01 1 1 1 100 100 nA mΩ 2.
5 2.
2 3.
3 3 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, ...

Similar Datasheet

SPP100N03S2-03 OptiMOS Power-Transistor - Infineon Technologies

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)