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SPB100N06S2-05

Infineon Technologies
Part Number SPB100N06S2-05
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com SPP100N06S2-05 SPB100N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RD...
Datasheet PDF File SPB100N06S2-05 PDF File

SPB100N06S2-05
SPB100N06S2-05

Overview
www.
DataSheet4U.
com SPP100N06S2-05 SPB100N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 55 4.
7 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N06S2-05 SPB100N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6048 Q67060-S6049 Marking PN0605 PN0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 S...


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