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SPP100N06S2L-05

Part Number	SPP100N06S2L-05
Manufacturer	Infineon Technologies
Description	OptiMOS Power-Transistor
Published	Sep 11, 2007
Detailed Description	www.DataSheet4U.com SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS ...
Datasheet	SPP100N06S2L-05 PDF File

Overview

www.
DataSheet4U.
com SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 55 4.
4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
3 max.
0.
5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.
01 1 1 1 100 100 nA mΩ 4.
3 4 3.
5 3.
2 5.
9 5.
6 4.
7 4.
4 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, I D=80A V GS=4.
5V, I D=80A, SMD version Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limit...

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