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SPP100N08S2-07

Part Number	SPP100N08S2-07
Manufacturer	Infineon Technologies
Description	OptiMOS Power-Transistor
Published	Sep 11, 2007
Detailed Description	www.DataSheet4U.com SPP100N08S2-07 SPB100N08S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RD...
Datasheet	SPP100N08S2-07 PDF File

Overview

www.
DataSheet4U.
com SPP100N08S2-07 SPB100N08S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 75 6.
8 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N08S2-07 SPB100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 PN0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=60V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N08S2-07 SPB100N08S2-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
3 max.
0.
5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=75V, VGS=0V, Tj=25°C V DS=75V, VGS=0V, Tj=125°C µA 0.
01 1 1 1 100 100 nA mΩ 5.
6 5.
3 7.
1 6.
8 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=66A V GS=10V, I D=66A, SMD version 1Current limited by bondwire ; with an RthJC = 0.
5K/W the chip is able to carry ID= 133A at 25°C, for detailed information see app.
-note ANPS071E a...

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SPP100N08S2-07 OptiMOS Power-Transistor - Infineon Technologies

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