DatasheetsPDF.com

SPI10N10L

Infineon Technologies
Part Number SPI10N10L
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1 ...
Datasheet PDF File SPI10N10L PDF File

SPI10N10L
SPI10N10L


Overview
www.
DataSheet4U.
com SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 154 10.
3 V m A PG-TO220-3-1 Type SPP10N10L SPI10N10L Package PG-TO220-3-1 PG-TO262-3-1 Ordering Code Q67042-S4163 Q67042-S4162 Marking 10N10L 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.
3 8.
1 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 42.
2 60 6 ±20 50 -55.
.
.
+175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.
3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.
3A, VDS =80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.
2.
1 Page 1 2005-02-14 SPI10N10L SPP10N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area 1) Symbol min.
RthJC RthJA RthJA - Values typ.
max.
3 100 75 50 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =125°C µA 0.
01 1 1 169 124 1 100 100 210 154 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.
5V, ID=8.
1A Drain-source on-state resistance VGS =10V, ID =8.
1A 1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air.
Rev.
2.
1 Page 2 2005-02-14 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)