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SPI16N50C3

Infineon Technologies
Part Number SPI16N50C3
Manufacturer Infineon Technologies
Description Power Transistor
Published Sep 11, 2007
Detailed Description SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultr...
Datasheet PDF File SPI16N50C3 PDF File

SPI16N50C3
SPI16N50C3

Overview
SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.
28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Marking 16N50C3 16N50C3 16N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and s...


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