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GSS4953BDY

GTM
Part Number GSS4953BDY
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/07/14 REVISED DATE : GSS4953BDY P-CHANNEL ENHANCEMENT MO...
Datasheet PDF File GSS4953BDY PDF File

GSS4953BDY
GSS4953BDY

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/07/14 REVISED DATE : GSS4953BDY P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 42m -5A The GSS4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0° 0.
40 0.
19 6.
20 5.
00 4.
00 8° 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45° 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 2 1 1 1 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 ±20 -5 -4 -20 2 0.
02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 1 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GSS4953BDY Page: 1/5 ISSUED DATE :2006/07/14 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance2 Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 unless otherwise specified) Min.
-30 -1.
0 Typ.
5 11.
7 2.
1 2.
9 9 10 37 23 582 125 86 Max.
-2.
5 ±100 -1 42 70 pF ns nC Unit V V S nA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±20V VDS=-24V, VGS=0 VGS=-10V, ID=-5A VGS=-4.
5V, ...


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