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GSS9926E

GTM
Part Number GSS9926E
Manufacturer GTM
Description POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/07 REVISED DATE :2005/09/29C GSS9926E N-CHANNEL ENHAN...
Datasheet PDF File GSS9926E PDF File

GSS9926E
GSS9926E

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/01/07 REVISED DATE :2005/09/29C GSS9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 6A The GSS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low on-resistance *Capable of 2.
5V gate drive *Low drive current *Surface mount package Description Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
5.
80 4.
80 3.
80 0 0.
40 0.
19 6.
20 5.
00 4.
00 8 0.
90 0.
25 REF.
M H L J K G Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45 1.
27 TYP.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 12 6.
0 4.
8 20 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Value 62.
5 Unit /W GSS9926E Page: 1/5 ISSUED DATE :2005/01/07 REVISED DATE :2005/09/29C Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
20 0.
5 Typ.
0.
1 15.
6 12.
5 1 6.
5 5 9 26.
2 6.
8 355 190 85 Max.
10 1 25 30 45 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= 10V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=20V, VGS=0 VDS=20V, VGS=0 VGS=4.
5V, ID=6.
0A VGS=2.
5V, ID=5.
2A ID=6A VDS=20V VGS=5V VDS=10V ID=1A VGS=5V RG=3.
3 RD=10 VGS=0V VDS=20V f=1.
0MHz Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Q...


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