DatasheetsPDF.com

RQK0606KGDQA

Part Number	RQK0606KGDQA
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET Power Switching
Published	Sep 13, 2007
Detailed Description	www.DataSheet4U.com RQK0606KGDQA Silicon N Channel MOS FET Power Switching REJ03G1497-0100 Rev.1.00 Jan 15, 2007 Featu...
Datasheet	RQK0606KGDQA PDF File

Overview

www.
DataSheet4U.
com RQK0606KGDQA Silicon N Channel MOS FET Power Switching REJ03G1497-0100 Rev.
1.
00 Jan 15, 2007 Features • Low on-resistance RDS(on) = 173 mΩ typ.
(at VGS = 4.
5 V, ID = 0.
8 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.
5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 2 G 1.
Source 2.
Gate 3.
Drain S 1 Notes: Marking is “KG“.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 60 ±12 1.
5 6 1.
5 0.
8 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Rev.
1.
00 Jan 15, 2007 page 1 of 7 RQK0606KGDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gat...

Similar Datasheet

RQK0606KGDQA Silicon N Channel MOS FET Power Switching - Renesas Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)