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IRF044

International Rectifier
Part Number IRF044
Manufacturer International Rectifier
Description MOSFET transistor
Published Sep 14, 2007
Detailed Description www.DataSheet4U.com PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Prod...
Datasheet PDF File IRF044 PDF File

IRF044
IRF044

Overview
www.
DataSheet4U.
com PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.
028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 44 27 176 125 1.
0 ±20 340 4.
5 -55 to 150 300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5(typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 01/24/01 IRF044 Electrical Characteristics Parameter BVDSS ∆BV DSS/∆TJ RDS(on) VGS(th) gfs IDSS @ Tj = 25°C (Unless Otherwise Specified) Min 60 — — — 2.
0 17 — — — — 39 6.
7 18 — — — — — Typ Max Units — 0.
68 — — — — — — — — — — — — — — — 6.
1 — — 0.
028 0.
032 4.
0 — 25 250 100 -100 88 15 52 23 130 81 7...


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