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WFP7N60

Part Number	WFP7N60
Manufacturer	Wisdom technologies
Description	N-Channel MOSFET
Published	Sep 15, 2007
Detailed Description	www.DataSheet4U.com Wisdom Semiconductor WFP7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Ga...
Datasheet	WFP7N60 PDF File

Overview

www.
DataSheet4U.
com Wisdom Semiconductor WFP7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.
2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2.
Drain ● 1.
Gate { ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 7.
0 4.
4 28 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 420 14.
7 4.
5 147 1.
18 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
0.
5 - Max.
0.
85 62.
5 Units °C/W °C/W °C/W Copyright@Wisdom Semiconductor Inc.
, All rights reserved.
WFP7N60 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS...

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WFP7N60 N-Channel MOSFET - Wisdom technologies

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