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G6402

GTM
Part Number G6402
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 17, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product CORPORATION G6402 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :20...
Datasheet PDF File G6402 PDF File

G6402
G6402

Overview
www.
DataSheet4U.
com Pb Free Plating Product CORPORATION G6402 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -20V 65m -4.
2A The G6402 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The G6402 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description Features Applications Ultra Low RDS(ON) Fast Switching Power Management in Notebook Computer Portable Equipment Battery Powered System.
Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 12 -4.
2 -3.
4 -10 1.
38 0.
01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max.
Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Unless otherwise specified) Min.
-20 -0.
5 Typ.
-0.
1 9 10.
6 2.
32 3.
68 5.
9 3.
6 32.
4 2.
6 740 167 126 Max.
100 -1 -10 65 135 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS= VGS, ID=-250uA VDS=-5.
0V, ID=-2.
8A VGS= 12V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-4.
5V, ID=-3.
7A VGS=-2.
5V, ID=-3.
1A ID=-4.
2A VDS=-16V VGS=-4.
5V VDS=-15V ID=-4.
2A, VGS=-10V RG=6 RD=3.
6 VGS=0V VDS=-15V f=1.
0MHz Symbol BVDSS BVDSS/ Tj VGS(th) gfs IGSS ) ) IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr T...


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