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IRG4IBC20KDPBF

Part Number	IRG4IBC20KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Sep 17, 2007
Detailed Description	www.DataSheet4U.com PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Feat...
Datasheet	IRG4IBC20KDPBF PDF File

Overview

www.
DataSheet4U.
com PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 FULLPAK • Lead-Free G E VCE(on) typ.
= 2.
27V @VGE = 15V, IC = 6.
3A n-channel Benefits • Generation 4 IGBTs offer highest efficiencies available max...

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IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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