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LNA2701L

Panasonic Semiconductor
Part Number LNA2701L
Manufacturer Panasonic Semiconductor
Description GaAs Bi-directional Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light s...
Datasheet PDF File LNA2701L PDF File

LNA2701L
LNA2701L

Overview
Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.
5 max.
Features Two-way directivity High-power output, high-efficiency : PO = 1.
8 mW (min.
) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.
8±0.
2 2-C0.
5 8˚ 26 .
5 ˚ 3.
8±0.
2 2.
4±0.
2 0.
8 ø1.
4±0.
2 8˚ 8˚ 1.
0 26 .
5˚ 16.
9±1.
0 Not soldered 2.
0 0.
8 2.
8±0.
2 1.
3±0.
2 8˚ 2-R0.
7 8˚ 0.
15 2-0.
7 max.
2-0.
5±0.
1 (1.
5) Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.
5±0.
1 2 1 2.
0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +65 – 30 to +85 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.
1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins * Symbol I e* λP ∆λ VF IR Ct Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz min 1.
2 typ 940 50 1.
3 35 max Unit mW/sr nm nm 1.
5 10 V µA pF Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.
I1 I2 1 Infrared Light Emitting Diodes LNA2701L ∆IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 ∆IF — VF∆ Ta = 25˚C ∆IF (mA) IFP (A) 50 10 ∆IF (mA) Forward current 1 10 10 2 60 50 40 30 20 10 40 Allowable forward current Pulse forward current 30 1 20 10 –1 10 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.
4 0.
8 1.
2 1.
6 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆Ie — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.
6 VF — Ta 10 3 ∆Ie — Ta IF = 20mA Relative radiant intensity ∆...


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