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LNA2W01L

Panasonic Semiconductor
Part Number LNA2W01L
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Featu...
Datasheet PDF File LNA2W01L PDF File

LNA2W01L
LNA2W01L

Overview
Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 4.
5 mW (typ.
) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) 1.
05±0.
1 1 0.
5±0.
1 Type number : Cathode mark (Red) 10.
0 min.
10.
0 min.
3.
2±0.
3 3.
2±0.
3 ø1.
8 2 45 ˚ 2.
2±0.
15 (0.
7) 0.
15 (0.
7) 1.
8 2.
8±0.
2 1.
8 Narrow directivity : θ = 18 deg.
(typ.
) Ultra-miniature double ended package 2.
8±0.
2 R0.
9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient...


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