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SD210DE

Linear Integrated Systems
Part Number SD210DE
Manufacturer Linear Integrated Systems
Description (SD210DE / SD214DE) High Speed N-channel Lateral Dmos Fet Switch
Published Sep 20, 2007
Detailed Description www.DataSheet4U.com SD210DE/214DE Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH Product Summary Features • ...
Datasheet PDF File SD210DE PDF File

SD210DE
SD210DE

Overview
www.
DataSheet4U.
com SD210DE/214DE Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH Product Summary Features • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.
2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage • N-Channel Enhancement Mode Benefits • High-Speed System Performance • Low Insertion Loss at High Frequencies • Low Transfer Signal Loss • Simple Driver Requirement • Single Supply Operation Applications • Fast Analog Switch • Fast Sample-and-Holds • Pixel-Rate Switching • DAC Deglitchers • High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.
The SD214DE is normally used for ±10-V analog switching.
These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds.
These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate.
A poly-silicon gate is featured for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and Zener protected—SD211DE/SST211 series.
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage .
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± 40 V Gate-Substrate Voltage .
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± 30 V Drain-Source Voltage (SD210DE) .
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30 V (SD214DE) .
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20 V Source-Drain Voltage (SD210DE) .
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10 V (SD214DE) .
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20 V Drain-Substrate Voltage (SD210DE) .
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30 V (SD214DE) .
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25 V (SD210DE) .
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15 V (SD214DE) .
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25 V Drain Current .
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