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GE08P20

GTM
Part Number GE08P20
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 22, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 P-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GE08P20 PDF File

GE08P20
GE08P20

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -200V 680m -8A Description The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -200 ±20 -8 -5 -30 96 0.
77 -55 ~ +150 Unit V V A A A W W/ Total Po...


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