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GE15N03

GTM
Part Number GE15N03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE : GE15N03 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GE15N03 PDF File

GE15N03
GE15N03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE : GE15N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 80m 15A The GE15N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as DC/DC converters and high efficiency switching circuit.
*Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 20 15 9 50 28 0.
22 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 4.
5 62 Unit /W /W GE15N03 Page: 1/5 ISSUED DATE :2005/01/25 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
30 1.
0 Typ.
0.
037 5.
4 1.
3 3.
6 3.
6 19.
8 13 3.
2 260 144 13 Max.
3.
0 100 25 250 80 100 pF ns nC Unit V V/ V nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS IDSS VDS=30V,...


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