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GE60L02

Part Number	GE60L02
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 27, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B GE60L02 N-CHANNEL ENHANC...
Datasheet	GE60L02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B GE60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13m 50A The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Description Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 ...

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GE60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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