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GE730

GTM
Part Number GE730
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/30 REVISED DATE : GE730 N-CHANNEL ENHANCEMENT MODE PO...
Datasheet PDF File GE730 PDF File

GE730
GE730

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/08/30 REVISED DATE : GE730 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 400V 1.
0 5.
5A The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 is universally preferred for all commercial-industrial applications.
The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
*Dynamic dv/dt Rating *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 400 30 5.
5 3.
5 23 74 0.
59 260 5.
5 7 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 1.
7 62 Unit /W /W GE730 Page: 1/5 ISSUED DATE :2005/08/30 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
400 2.
0 Typ.
0.
36 30 35 3.
7 20 8 20 47 18 565 70 38 Max.
4.
0 100 10 100 1 pF ns nC Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=2.
75A VGS= 30V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Tra...


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