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GE88L02

GTM
Part Number GE88L02
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88L02 N-CHANNEL ENHANCEMENT MODE ...
Datasheet PDF File GE88L02 PDF File

GE88L02
GE88L02

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 88A The GE88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 88 55 321 96 0.
77 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-case Rthj-amb Value 1.
3 62 Unit /W /W GE88L02 Page: 1/5 ISSUED DATE :2006/01/05 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
037 45 50 5.
5 38 10.
5 84 38 115 1660 1000 400 Max.
3.
0 ±100 1 25 5 10 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=40A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=40A VGS=4.
5V, ID=28A ID=40A VDS=20V VGS=5V VDS=15V ID=25A VGS=10V RG=3.
3 RD=0.
6 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leaka...


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