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GI01L60

GTM
Part Number GI01L60
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/19 REVISED DATE : GI01L60 Description Features N-CHA...
Datasheet PDF File GI01L60 PDF File

GI01L60
GI01L60

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/08/19 REVISED DATE : GI01L60 Description Features N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
*Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 30 1 0.
8 3 29 0.
232 0.
5 1 0.
5 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Ava...


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