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GI09N20

GTM
Part Number GI09N20
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHA...
Datasheet PDF File GI09N20 PDF File

GI09N20
GI09N20

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.
6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 200 ±30 8.
6 5.
5 36 69 0.
55 40 8.
6 -55 ~ +150 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 1.
8 110 Unit /W /W GI09N20 Page: 1/4 ISSUED DATE :2005/06/27 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
200 2.
0 Typ.
0.
24 3.
7 23 4 13 12 25 36 16 500 90 40 Max.
4.
0 ±100 10 100 380 37 800 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=5A VGS= ±30V VDS=200V, VGS=0 VDS=160V, VGS=0 VGS=10V, ID=5A ID=8.
6A VDS=160V VGS=10V VDD=100V ID=8.
6A VGS=10V RG=10 RD=11.
6 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current ...


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