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LNCQ03PS

Part Number	LNCQ03PS
Manufacturer	Panasonic Semiconductor
Description	Red Light Semiconductor Laser
Published	Mar 22, 2005
Detailed Description	Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser For optical control systems 0.4±0.1 ø5.6 +0 –0.025 ø4.4 ø3.5...
Datasheet	LNCQ03PS PDF File

Overview

Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser For optical control systems 0.
4±0.
1 ø5.
6 +0 –0.
025 ø4.
4 ø3.
55±0.
1 1.
0±0.
1 Unit : mm 2 Reference slot High output operations with oscillatins wavelength of 660nm : 35mw Low threshold current Stable single horizontal mode osillation Space saved by miniaturization Low astigmatic difference facilitates good concentrated light spot, production.
110˚±1˚ Features PD 3 Junction plane Reference plane 1 LD 2.
3 1.
27±0.
07 0.
25 ø1.
0 min.
Reference plane 1.
2 3-ø0.
45 6.
5 Applications DVD-Ram Pointer ø2.
0 1 2 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 35 1.
5 30 60 –10 to +60 – 40 to +85 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Symbol Ith IOP VOP RS λL SE Horizontal direction Vertical direction Conditions CW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 4mW CW PO = 4mW min 20 50 2.
0 3.
0 635 0.
5 7.
5 17 –2.
0 –3.
0 typ 50 95 2.
5 5.
0 660 0.
7 8.
5 22 max 70 120 3.
0 10 675 1.
1 10.
5 26.
5 +2.
0 +3.
0 Unit mA mA V Ω nm W/A deg.
deg.
deg.
deg.
µm Resistance between electrodes Oscillation wavelength Slope efficiency Radiation angle Optical axis accuracy *1 *2 *3 θ// θ⊥ θX θY As*2 X direction Y direction Astigmatic difference 5.
0 10 θ// and θ⊥ are the angles where the optical intencity is a half of its max.
value.
( half full angle ) Reference to package axis.
Guaranteed value in design.
1 Semiconductor Laser LNCQ03PS PO — IOP 80 160 Ta = 25˚C I—V 100 Far field pattern Radiant power PO (mW) 60 120 Relative radiant power ∆PO 75 40 I (mA) 80 50 20 Current 40 25 Fv Fh 0 0 50 100 150 200 0 0 1 2 3 4 0 60 40 20 0 20 40 60 ...

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LNCQ03PS Red Light Semiconductor Laser - Panasonic Semiconductor

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