DatasheetsPDF.com

IRG4BC30K-SPBF

International Rectifier
Part Number IRG4BC30K-SPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 28, 2007
Detailed Description www.DataSheet4U.com PD - 95785 IRG4BC30K-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating o...
Datasheet PDF File IRG4BC30K-SPBF PDF File

IRG4BC30K-SPBF
IRG4BC30K-SPBF


Overview
www.
DataSheet4U.
com PD - 95785 IRG4BC30K-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
21V @VGE = 15V, IC = 16A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC30K-S and IRGBC30M-S devices Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
D 2 Pak Max.
600 28 16 58 58 10 ±20 260 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)† Weight Typ.
––– 0.
5 ––– 1.
44 Max.
1.
2 ––– 40 ––– Units °C/W g www.
irf.
com 1 8/27/04 IRG4BC30K-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 0.
54 — 2.
21 — 2.
21 VCE(ON) Collec...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)