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KHB011N40F2

KEC
Part Number KHB011N40F2
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Oct 3, 2007
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Desc...
Datasheet PDF File KHB011N40F2 PDF File

KHB011N40F2
KHB011N40F2

Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB011N40P1 O C F E G B Q I DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS(Min.
)= 400V, ID= 10.
5A Drain-Source ON Resistance : RDS(ON)=0.
53 @VGS =10V Qg(typ.
) =32.
5nC K M L J D N N P F G H I J 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 + H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 RATING CHARACTERISTIC SYMBOL KHB011N40F1 UNIT KHB011N40P1 KHB011N40F2 400 30 10.
5 ID 6.
6 IDP EAS EAR dv/dt 135 PD 1.
07 Tj Tstg 150 -55 150 0.
35 W/ 42 360 13.
5 4.
5 44 6.
6* 42* mJ mJ V/ns W Q 1 2 3 1.
GA...


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