DatasheetsPDF.com

CM900DU-24NF

Mitsubishi Electric
Part Number CM900DU-24NF
Manufacturer Mitsubishi Electric
Description IGBT Module
Published Oct 4, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF q IC ....
Datasheet PDF File CM900DU-24NF PDF File

CM900DU-24NF
CM900DU-24NF

Overview
www.
DataSheet4U.
com MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF q IC .
.
900A q VCES .
.
1200V q Insulated Type q 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J.
S.
T.
Mfg.
Co.
Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.
5±0.
25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 38±0.
25 42.
5±0.
25 38±0.
25 74±0.
25 74±0.
25 34.
6 +1.
0 –0.
5 4 15.
7 A G1 E1 G2 E2 C1 8-f6.
5 MOUNTING HOLES PPS E2 C1 10.
5 B 15.
7 5.
5 18 129.
5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.
1 L A B E L C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM G1 E1 E2 G2 C2E1 C2 1.
9 ±0.
2 34.
6 +1.
0 –0.
5 Mar.
2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.
5 ~ 4.
5 3.
5 ~ 4.
5 1400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min.
Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current Test conditions VCE = VCES, VGE = 0V Min.
— 6 — — — — — — — — — — — — — — — — — — — — 0.
35 Limits Typ.
— 7 — 1.
8 2.
0 0.
143 — — — 4800 — — — — — 50 — — — 0.
016 — — — Max.
1 8 0.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)