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EC3A04B

Part Number	EC3A04B
Manufacturer	Sanyo Semicon Device
Description	N-Channel Junction Silicon FET
Published	Oct 4, 2007
Detailed Description	www.DataSheet4U.com Ordering number : ENA0509 EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET...
Datasheet	EC3A04B PDF File

Overview

www.
DataSheet4U.
com Ordering number : ENA0509 EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Applicatins • Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features • • • • Small IGSS.
Small Ciss.
Ultraminiature package facilitates miniaturization in end products.
Halogen free compliance (UL94HB).
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA Ratings...

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