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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7
16 → O1 15 → O2 14 → O3 13 → O4 12 → O5 11 → O6 10 → O7 9
OUTPUT
FEATURES Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta=–40 to +85 °C)
q
GND
8
NC
16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP)
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
Vz=7V INPUT 10. 5k 10k GND
The seven circuits share the GND.
FUNCTION The M63802P, M63802FP, M63802GP and M63802KP each have seven circuits consisting of NPNtransistor. The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = –40 ~ +85°C)
Conditions Output, H Current per circuit output, L M63802P
Ratings –0. 5 ~ +35 300 –0. 5 ~ +35 1. 47 1. 00 0. 80 0. 78 –40 ~ +85 –55 ~ +125
Unit V mA V
Pd
Power dissipation
Ta = 25°C, when mounted on board
M63802FP M63802GP M63802KP
W
Topr Tstg
Operating temperature Storage temperature
°C °C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
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