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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
IN1→ IN2→ IN3→ INPUT IN4→ IN5→ IN6→ IN7→
1 2 3 4 5 6 7 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9
OUTPUT
FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta=–40 to +85 °C)
GND
→COM COMMOM
Package type
16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP)
CIRCUIT DIAGRAM
COM OUTPUT
Vz=7V
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
INPUT 10. 5k 10k GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω
FUNCTION The M63812P, M63812FP, M63812GP and M63812KP each have seven circuits consisting of NPNtransistor. A spikekiller clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Parameter Collector-emitter voltage Collector current
(Unless otherwise noted, Ta = –40 ~ +85°C)
Conditions Output, H Current per circuit output, L
Ratings –0. 5 ~ +35 300 –0. 5 ~ +35 300 M63812P M63812FP M63812GP M63812KP 35 1. 47 1. 00 0. 80 0. 78 –40 ~ +85 –55 ~ +125
Unit V mA V mA V
Input voltage Clamping diode forward current Clamping diode reverse voltage Ta = 25°C,...
M63812P PDF File
