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MG300Q2YS61

Toshiba Semiconductor
Part Number MG300Q2YS61
Manufacturer Toshiba Semiconductor
Description High Power Switching Applications Motor Control Applications
Published Oct 4, 2007
Detailed Description www.DataSheet4U.com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applicatio...
Datasheet PDF File MG300Q2YS61 PDF File

MG300Q2YS61
MG300Q2YS61

Overview
www.
DataSheet4U.
com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications · · · · · · High input impedance High speed: tf = 0.
3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.
6 V (max) Enhancement-mode Includes a complete half bridge in one package.
The electrodes are isolated from case.
Unit: mm Equivalent Circuit C1 G1 JEDEC E1 E1/C2 ― ― 2-109C4A JEITA TOSHIBA G2 E2 E2 Weight: 430 g (typ.
) Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting ¾ ¾ Rating 1200 ±20 300 300 2700 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A A W °C °C Vrms N·m N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque 1 2002-08-29 MG300Q2YS61 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) IF = 300 A, VGE = 0 V Tc = 25°C Tc = 125°C Inductive load VCC = 600 V IC = 300 A VGE = ±15 V RG = 2.
7 W Test Condition VGE = ±20 V, VCE = 0 V VCE = 1200 V, VGE = 0 V IC = 300 mA, VCE = 5V IC = 300 A, VGE = 15 V Tc = 25°C Tc = 125°C Min ¾ ¾ 6.
0 ¾ ¾ ¾ ¾ ¾ ¾ ¾ (Note 1) ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ.
¾ ¾ 7.
0 2.
1 2.
7 25000 0.
3 0.
2 0.
5 0.
5 0.
1 0.
6 2.
4 2.
2 0.
2 ¾ ¾ Max ±500 1 8.
0 2.
6 3.
2 ¾ ¾ ¾ ¾ ¾ 0.
3 ¾ 2.
8 ¾ ¾ 0.
045 0.
100 V ms °C/W ms Unit nA mA V V pF VCE = 10 V, VGE = 0 V, f = 1 MHz IF = 300 A, VGE = -15 V, di/dt = 1500 A/ms Transistor stage Diode stage Note 1: Switching time and reverse recovery time test circui...


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