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MG400Q1US65H

Toshiba Semiconductor
Part Number MG400Q1US65H
Manufacturer Toshiba Semiconductor
Description High Power & High Speed Switching Applications
Published Oct 4, 2007
Detailed Description www.DataSheet4U.com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switc...
Datasheet PDF File MG400Q1US65H PDF File

MG400Q1US65H
MG400Q1US65H

Overview
www.
DataSheet4U.
com TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H MG400Q1US65H High Power & High Speed Switching Applications Unit: mm • • • High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit E C E JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ⎯ ⎯ Weight: 465 g (typ.
) Rating 1200 ±20 400 800 400 800 2650 150 −40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temper...


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