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GU70T03

GTM
Part Number GU70T03
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE :2005/12/12B GU70T 03 N-CHANNEL ENHAN...
Datasheet PDF File GU70T03 PDF File

GU70T03
GU70T03

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE :2005/12/12B GU70T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 10m 60A The GU70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Package Dimensions REF.
A b L4 c L3 L1 E Millimeter REF.
Min.
Max.
4.
40 4.
80 c2 0.
76 1.
00 b2 0.
00 0.
30 B D 0.
36 0.
5 e 1.
50 REF.
L 2.
29 2.
79 9.
80 10.
4 L2 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 8.
6 9.
0 2.
54 REF.
14.
6 15.
8 0˚ 8˚ 1.
27 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 60 43 195 53 0.
36 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-c Rthj-a Value 2.
8 110 Unit /W /W GU70T03 Page: 1/4 ISSUED DATE :2005/02/25 REVISED DATE :2005/12/12B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
032 35 16.
5 5 10.
3 8.
2 105 21.
4 8.
5 1485 245 170 Max.
3.
0 ±100 1 250 10 18 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=33A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=33A VGS=4.
5V, ID=20A ID=33A VDS=20V VGS=4.
5V VDS=15V ID=33A VGS=10V RG=3.
3 RD=0.
45 VGS=0V VDS=25V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltag...


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