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H5N2522FN

Renesas Technology
Part Number H5N2522FN
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Oct 5, 2007
Detailed Description www.DataSheet4U.com H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 200...
Datasheet PDF File H5N2522FN PDF File

H5N2522FN
H5N2522FN

Overview
www.
DataSheet4U.
com H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.
2.
10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 12 48 12 48 12 9 35 3.
57 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1573-0210 Rev.
2.
10 May 08, 2007 Page 1 of 6 H5N2522FN Electrical C...


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